emz7 / umz7n transistors rev.a 1/4 general purpose transistor (dual transistors) emz7/umz7n z features ! 1) both a 2sa2018 chip and 2sc5585 chip in a emt or umt package. 2) mounting possible with emt3 or umt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. 5) low v ce(sat) z structure npn / pnp epitaxial planar silicon transistor z equivalent circuit tr 2 tr 1 (3) emz7 / umz7n (2) (1) (4) (5) (6) z z external dimensions (unit : mm) abbreviated symbol : z7 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) umz7n rohm : umt6 eiaj : sc-88 abbreviated symbol : z7 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 emz7 rohm : emt6 z z absolute maximum ratings (ta=25 q c) parameter symbol limits unit tr 1 tr 2 v cbo ? 15 15 v v ceo ? 12 12 v v ebo ? 6 6 v i c i cp ? 500 500 ma ? 1 1 a tj 150 c tstg ? 55 to + 150 c p c 150(total) mw ? 1 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded.
emz7 / umz7n transistors rev.a 2/4 z electrical characteristics (ta=25 q c) tr 1 (npn) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 15 12 6 ? ? 270 ? ? ? ? ? ? ? ? ? 320 7.5 ? ? ? 0.1 0.1 90 680 250 ? ? vi c = 10 a i c = 1ma i e = 10 a v cb = 15v v eb = 6v v ce /i c = 2v/10ma v ce = 2v, i c = ? 10ma, f = 100mhz i c /i b = 200ma /10ma v cb = 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance tr 2 (pnp) symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) f t cob min. ? 15 ? 12 ? 6 ? ? 270 ? ? ? i c = ? 10 a i c = ? 1ma i e = ? 10 a v cb = ? 15v v eb = ? 6v v ce /i c = ? 2v/ ? 10ma v ce = ? 2v, i c = 10ma, f = 100mhz i c /i b = ? 200ma/ ? 10ma v cb = ? 10v, i e = 0a, f = 1mhz ? ? ? ? ? ? 260 ? 100 6.5 typ. ? ? ? ? 0.1 ? 0.1 680 ? 250 ? ? max. v v v a a ? mv mhz pf unit conditions parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance z z packaging specifications umz7n emz7 tr 3000 ? t2r 8000 ? taping part no. packaging type code basic ordering unit (pieces)
emz7 / umz7n transistors rev.a 3/4 z electrical characteristic curves tr 1 (npn) 0 1 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 100 0.5 1.0 1.5 v ce =2v 1000 ta = 1 25 c 25 c ? 40 c 2 5 20 50 200 500 1 2 5 10 20 50 100 200 500 collector current : i c (ma) fig.2 dc current gain vs. collector current 10 dc current gain : h fe 1000 20 50 100 200 500 1000 ta = 1 25 c 5 2 1 v ce =2v 25 c ? 40 c 1 2 5 10 20 50 100 200 i c /i b =20 1 2 5 10 20 50 100 200 5001000 collector saturation voltage : v ce (sat) (mv) ta = 1 25 c 500 1000 25 c ? 40 c collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce (sat) ( v) 1 2 5 10 20 50 100 200 ta = 25 c 1 2 5 10 20 50 100 200 5001000 collector current : i c (ma) i c /i b = 50 500 1000 20 10 fig.4 collector-emitter saturation voltage vs. collector current ( ? ) 10 20 50 100 200 500 1000 2000 i c /i b = 20 1 2 5 10 20 50 100 200 5001000 base saturation voltage : v be (sat) (mv) ta =? 40 c 5000 10000 25 c 125 c collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 2 1 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 500 1000 ta = 25 ? c v ce = 2v f t ( mh z) collector to base voltage : v cb (v) pulsed fig.6 collector output capacitance emitter input capacitance vs. base voltage 0.2 0.1 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 500 1000 ta = 25 c i e = 0a f = 1mhz emitter input capacitance : cib (pf) collector output capacitance : cob (pf) emitter to base voltage : v eb (v) cib cob fig.7 collector output capacitance vs collector-base voltage emitter input capacitance vs emitter-base voltage
emz7 / umz7n transistors rev.a 4/4 tr 2 (pnp) 0 1 2 5 20 50 100 200 500 1000 10 base to emitter voltage : v be (v) fig.8 grounded emitter propagation characteristics collector current : i c (ma) 1.5 1.0 0.5 v ce = 2v ta=125 ? c ta=25 ? c ta= -40 ? c 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.9 dc current gain vs. collector current 1 dc current gain : h fe 500 2 5 10 200 500 1000 20 50 100 ta=25 c ta= ? 40 c ta=125 c v ce = 2v 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.10 collector-emitter saturation voltage vs. collector current ( ) 1 collector saturation voltage : v ce (sat) (v) 500 2 5 10 200 500 1000 20 50 100 ta=25 c ta= ? 40 c ta=125 c i c /i b =20 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.11 collector-emitter saturation voltage vs. collector current 1 collector saturation voltage : v ce (sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta = 25 c i c / i b = 50 i c / i b = 20 i c / i b = 10 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.12 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 500 20 50 100 2000 5000 10000 200 500 1000 ta = 25 c ta = ? 40 c ta = 125 c i c /i b = 20 1 2 5 10 20 50 100 200 1000 emitter current : i c (ma) fig.13 gain bandwidth product vs. emitter current 1 transition frequency : f t (mhz) 500 2 5 10 200 500 1000 20 50 100 v ce = 2v ta = 25 c 0.2 0.5 1 2 5 10 20 50 100 0.1 1 2 5 10 20 50 100 200 500 1000 ta = 25 c f = 1mhz i e = 0a emitter input capacitance : cib(f) emitter to base voltage : v eb ( v) fig.14 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob collector output capacitance : cob (pf)
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm c o.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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